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IXFX100N25 Datasheet
Datasheet specifications
| Datasheet's name | IXF(X,K)100N25 |
|---|---|
| File size | 154.919 KB |
| File type | |
| Number of pages | 3 |
Download Datasheet IXF(X,K)100N25 |
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Other documentations
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Technical specifications
- Manufacturer: IXYS
- Series: HiPerFET™
- Packaging: Tube
- Part Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3
- detail: N-Channel 250V 100A (Tc) 560W (Tc) Through Hole PLUS247™-3